FDJ129P Datasheet, Fairchild Semiconductor

*
  –4.2 A,
  –20 V. RDS(ON) = 70 mΩ @ VGS =
  –4.5 V RDS(ON) = 120 mΩ @ VGS =
  –2.5 V
* Low gate charge .

Features
*
  –4.2 A,
  –20 V. RDS(ON) = 70 mΩ @ VGS =
  –4.5 V RDS(ON) =.

This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –4.2 A,
  –20 V. RDS(ON) = 70 mΩ @ VGS = <.

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